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IRFH7882PBF Power MOSFET

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Description

VDSS RDS(on) max (@ VGS = 10V) Qg (typical) Rg (typical) ID (@TC (Bottom) = 25°C) 80 3.1 49 0.9 180 V m nC  A   FastIRFET™ IRFH7882PbF HEXFET.
Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component.

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Features

* Low RDS(ON) (< 3.1m) Low Thermal Resistance to PCB (

Applications

*  Optimized for Secondary Side Synchronous Rectification
*  Primary Switch for High Frequency 48V/60V Telecom DC-DC Power Supplies
*  Hot Swap and Active O-Ring

IRFH7882PBF Distributors

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