IRFR2407, IRFU2407 Datasheet - International Rectifier

IRFR2407 Power MOSFET

l HEXFET® Power MOSFET D VDSS = 75V G S RDS(on) = 0.026Ω ID = 42A Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged.

IRFR2407 Features

* shown in millimeters (inches) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 4 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7

IRFU2407_InternationalRectifier.pdf