IRG7PH46U-EP Datasheet - International Rectifier

IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR

IRG7PH46U-EP Features

* Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Fre

IRG7PH46U-EP_InternationalRectifier.pdf

IRG7PH46U-EP Datasheet Preview — Preview of IRG7PH46U-EP PDF

Datasheet Details

Part number:

IRG7PH46U-EP

Manufacturer:

International Rectifier

File Size:

413.79 KB

Description:

Insulated gate bipolar transistor.

IRG7PH46U-EP Distributor

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IRG7PH46U-EP IRG7PH46U-EP INSULATED GATE BIPOLAR TRANSISTOR International Rectifier