IRGBC30S - INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

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Datasheet Details

Part number	IRGBC30S
Manufacturer	International Rectifier
File Size	118.51 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC30S_InternationalRectifier.pdf

IRGBC30S Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency Curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.2V @VGE = 15V, I C = 18A n-channel.

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Published: Jun 5, 2007 |