IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

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Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, whil.

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Datasheet Specifications

Part number: IRGBC40K
Manufacturer: International Rectifier
File Size: 188.42 KB
Datasheet: IRGBC40K_InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR

Features

* Short circuit rated - 10µs @ 125°C, V GE = 15V
* Switching-loss rating includes all "tail" losses
* Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast IGBT VCES = 600V VCE(sat) ≤ 3.2V @VGE = 15

Applications

* These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collect

IRGBC40K Distributors

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IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

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