IRH9130 Datasheet - International Rectifier

IRH9130 RADIATION HARDENED POWER MOSFET THRU-HOLE

www.DataSheet4U.com PD - 90880C RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA) Product Summary Part Number Radiation Level R DS(on) IRH9130 100K Rads (Si) 0.3Ω IRH93130 300K Rads (Si) 0.3Ω ID -11A -11A IRH9130 100V, P-CHANNEL RADHard HEXFET TECHNOLOGY ™ ® International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have.

IRH9130 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @

IRH9130 Datasheet (145.58 KB)