IRH9150 Datasheet - International Rectifier

IRH9150 RADIATION HARDENED POWER MOSFET THRU-HOLE

www.DataSheet4U.com PD - 90879C RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE) Product Summary Part Number Radiation Level R DS(on) IRH9150 100K Rads (Si) 0.075Ω IRH93150 300K Rads (Si) 0.075Ω IRH9150 100V, P-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® ID -22A -22A International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These device.

IRH9150 Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @

IRH9150 Datasheet (150.06 KB)