IRH9250 Datasheet - International Rectifier

IRH9250 TRANSISTOR P-CHANNEL

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1392 www.DataSheet4U.com AVALANCHE ENERGY AND dv/dt RATED IRH9250 P-CHANNEL HEXFET® TRANSISTOR RAD HARD -200 Volt, 0.315Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si). Under identical pre- and postradiation test conditions, International Rectifier’s P-.

IRH9250 Features

* n n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating S

IRH9250 Datasheet (123.68 KB)