IRH9230 Datasheet - International Rectifier

IRH9230 TRANSISTOR P-CHANNEL

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1391 www.DataSheet4U.com AVALANCHE ENERGY AND dv/dt RATED IRH9230 P-CHANNEL HEXFET TRANSISTOR ® RAD HARD -200 Volt, 0.8Ω , RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P.

IRH9230 Features

* n Radiation Hardened up to 1 x 105 Rads (Si) n Single Event Burnout (SEB) Hardened n Single Event Gate Rupture (SEGR) Hardened n Gamma Dot (Flash X-Ray) Hardened n Neutron Tolerant n Identical Pre- and Post-Electrical Test Conditions n Repetitive Avalanche Rating n Dynamic dv/dt Rating n Simple Dri

IRH9230 Datasheet (124.64 KB)