s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutr
✔ IRHN7C50SE Application
such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy puls
IRHN7130, International Rectifier
IRHN7130
Radiation Hardened Power MOSFET Surface-Mount (SMD-1) 100V, 14A, N-channel, Rad Hard HEXFET™ Technology
PD-90821D
Features
Single event e.
IRHN7150, International Rectifier
IRHN7150 (JANSR2N7268U)
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 100V, 34A, N-channel, Rad Hard HEXFET™ Technology
PD-90720G
Features
.
IRHN7230, International Rectifier
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Provisional Data Sheet No. PD-9.822A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRA.
IRHN7250, International Rectifier
IRHN7250 (JANSR2N7269U)
Radiation Hardened Power MOSFET Surface Mount (SMD-1) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology
PD-90679L
Features
.
IRHN7250SE, International Rectifier
PD - 91780B
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
IRHN7250SE 200V, N-CHANNEL
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary Part Numb.
IRHN7450, International Rectifier
..
PD - 90819A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
500Volt, 0.45Ω , MEGA RAD HARD HEXFET
International Rectifi.
IRHN7450SE, International Rectifier
..
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Provisional Data Sheet No. PD-9.1313A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® T.
