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IRHN7C50SE, IRHN2C50SE N-Channel Transistor

IRHN7C50SE Description

Provisional Data Sheet No.PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (.

IRHN7C50SE Features

* s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Dri

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This datasheet PDF includes multiple part numbers: IRHN7C50SE, IRHN2C50SE. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRHN7C50SE, IRHN2C50SE
Manufacturer
International Rectifier
File Size
32.41 KB
Datasheet
IRHN2C50SE_InternationalRectifier.pdf
Description
N-Channel Transistor
Note
This datasheet PDF includes multiple part numbers: IRHN7C50SE, IRHN2C50SE.
Please refer to the document for exact specifications by model.

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N-Channel Transistor International Rectifier
International Rectifier IRHN7C50SE-like datasheet