IRHN2C50SE_InternationalRectifier.pdf
Datasheet Details
Part number:
IRHN7C50SE, IRHN2C50SE
Manufacturer:
International Rectifier
File Size:
32.41 KB
Description:
N-channel transistor.
Note:
This datasheet PDF includes multiple part numbers: IRHN7C50SE, IRHN2C50SE.
Please refer to the document for exact specifications by model.
Provisional Data Sheet No.
PD-9.1476A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHN2C50SE IRHN7C50SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 600 Volt, 0.60Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure.
Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose
IRHN7C50SE Features
* s Radiation Hardened up to 1 x 105 Rads (Si) s Single Event Burnout (SEB) Hardened s Single Event Gate Rupture (SEGR) Hardened s Gamma Dot (Flash X-Ray) Hardened s Neutron Tolerant s Identical Pre- and Post-Electrical Test Conditions s Repetitive Avalanche Rating s Dynamic dv/dt Rating s Simple Dri
IRHN7C50SE Distributor
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