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IRHN9130

P-CHANNEL TRANSISTOR

IRHN9130 Features

* n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHN9130 Datasheet (222.27 KB)

Preview of IRHN9130 PDF

Datasheet Details

Part number:

IRHN9130

Manufacturer:

International Rectifier

File Size:

222.27 KB

Description:

P-channel transistor.
www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.886 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRAN.

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IRHN9130 P-CHANNEL TRANSISTOR International Rectifier

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