IRHN9150 Datasheet (International Rectifier)

IRHN9150, P-CHANNEL TRANSISTOR

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PD-9.885 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR -100 Volt, 0.120Ω , RAD HARD HEXFET International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si).

Under identical pre- and post-radiation test conditions, International Rectifier’s P-channel RAD HARD HEXFETs

IRHN9150 Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating