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IRHN9150

P-CHANNEL TRANSISTOR

IRHN9150 Features

* s s s s s s s s s s s s s Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating

IRHN9150 Datasheet (213.36 KB)

Preview of IRHN9150 PDF

Datasheet Details

Part number:

IRHN9150

Manufacturer:

International Rectifier

File Size:

213.36 KB

Description:

P-channel transistor .
www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.885 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRAN.

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IRHN9150 P-CHANNEL TRANSISTOR International Rectifier

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