Datasheet4U Logo Datasheet4U.com

IRHN9230

P-CHANNEL TRANSISTOR

IRHN9230 Features

* n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simp

IRHN9230 Datasheet (222.17 KB)

Preview of IRHN9230 PDF

Datasheet Details

Part number:

IRHN9230

Manufacturer:

International Rectifier

File Size:

222.17 KB

Description:

P-channel transistor .
www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1445 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TR.

📁 Related Datasheet

IRHN9250 RADIATION HARDENED POWER MOSFET (International Rectifier)

IRHN9130 P-CHANNEL TRANSISTOR (International Rectifier)

IRHN9150 P-CHANNEL TRANSISTOR (International Rectifier)

IRHN2C50SE N-Channel Transistor (International Rectifier)

IRHN3150 Radiation Hardened Power MOSFET (International Rectifier)

IRHN4150 RADIATION HARDENED POWER MOSFET (International Rectifier)

IRHN7130 Radiation Hardened Power MOSFET (International Rectifier)

IRHN7150 Radiation Hardened Power MOSFET (International Rectifier)

IRHN7230 N-Channel Transistor (International Rectifier)

IRHN7250 Radiation Hardened Power MOSFET (International Rectifier)

TAGS

IRHN9230 P-CHANNEL TRANSISTOR International Rectifier

Image Gallery

IRHN9230 Datasheet Preview Page 2 IRHN9230 Datasheet Preview Page 3

IRHN9230 Distributor