Datasheet Details
Part number:
IRHN9230
Manufacturer:
International Rectifier
File Size:
222.17 KB
Description:
P-channel transistor .
IRHN9230_InternationalRectifier.pdf
Datasheet Details
Part number:
IRHN9230
Manufacturer:
International Rectifier
File Size:
222.17 KB
Description:
P-channel transistor .
IRHN9230, P-CHANNEL TRANSISTOR
www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.
PD-9.1445 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR -200 Volt, 0.8Ω, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 10 5 Rads (Si).
Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD HARD HEXFETs
IRHN9230 Features
* n n n n n n n n n n n n Radiation Hardened up to 1 x 105 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simp
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