IRHN9250 Datasheet - International Rectifier

IRHN9250 RADIATION HARDENED POWER MOSFET

www.DataSheet4U.com PD - 91300D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number Radiation Level IRHN9250 100K Rads (Si) IRHN93250 300K Rads (Si) RDS(on) 0.315Ω 0.315Ω ID -14A -14A IRHN9250 JANSR2N7423U 200V, P-CHANNEL REF: MIL-PRF-19500/662 RAD Hard HEXFET TECHNOLOGY QPL Part Number JANSR2N7423U JANSF2N7423U ™ ® International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a dec.

IRHN9250 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC =

IRHN9250 Datasheet (273.98 KB)