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IRHN9250 RADIATION HARDENED POWER MOSFET

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Description

www.DataSheet4U.com PD - 91300D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1) Product Summary Part Number Radiation Level IRHN9250 100K Rads.

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Datasheet Specifications

Part number
IRHN9250
Manufacturer
International Rectifier
File Size
273.98 KB
Datasheet
IRHN9250_InternationalRectifier.pdf
Description
RADIATION HARDENED POWER MOSFET

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC =

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC

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