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IRHNB7260 RADIATION HARDENED POWER MOSFET

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Description

PD - 91798A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number Radiation Level IRHNB7260 100K Rads (Si) IRHNB3260 300K .

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Datasheet Specifications

Part number
IRHNB7260
Manufacturer
International Rectifier
File Size
152.44 KB
Datasheet
IRHNB7260_InternationalRectifier.pdf
Description
RADIATION HARDENED POWER MOSFET

Features

* n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www. DataSheet4U. com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC

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