IRHNB7360SE Datasheet (International Rectifier) - RADIATION HARDENED POWER MOSFET

IRHNB7360SE, RADIATION HARDENED POWER MOSFET

PD - 91740B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A IRHNB7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ® SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both To

IRHNB7360SE Features

* ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100