IRHNB7460SE Datasheet (International Rectifier) - RADIATION HARDENED POWER MOSFET

IRHNB7460SE, RADIATION HARDENED POWER MOSFET

PD - 91741A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7460SE Radiation Level RDS(on) 100K Rads (Si) 0.32Ω ID 20A IRHNB7460SE 500V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ® SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both To

IRHNB7460SE Features

* ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100