IRHNB7Z60 Datasheet - International Rectifier

IRHNB7Z60 RADIATION HARDENED POWER MOSFET

PD - 91754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number IRHNB7Z60 IRHNB3Z60 IRHNB4Z60 IRHNB8Z60 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.009Ω 0.009Ω 0.009Ω 0.009Ω ID 75 A 75 A 75 A 75 A IRHNB7Z60 30V, N-CHANNEL RAD-Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard technology provides high performance power MOSFETs for space applications. This technology has over a decade of prov.

IRHNB7Z60 Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 1

IRHNB7Z60 Datasheet (154.52 KB)