IRHNB7Z60 RADIATION HARDENED POWER MOSFET

International Rectifier

Description

PD - 91754A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number IRHNB7Z60 IRHNB3Z60 IRHNB4Z60 IRHNB8Z60 Radiation Level .

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Datasheet Specifications

Part number: IRHNB7Z60
Manufacturer: International Rectifier
File Size: 154.52 KB
Datasheet: IRHNB7Z60_InternationalRectifier.pdf
Description: RADIATION HARDENED POWER MOSFET

Features

* n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings www. DataSheet4U. com ID @ VGS = 12V, TC = 25°C ID @ VGS = 1

Applications

* This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as

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IRHNB7Z60 RADIATION HARDENED POWER MOSFET International Rectifier

International Rectifier IRHNB7Z60-like datasheet