IRHNB7264SE Datasheet - International Rectifier

IRHNB7264SE RADIATION HARDENED POWER MOSFET

PD - 91738A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A IRHNB7264SE 250V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ® SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both To.

IRHNB7264SE Features

* ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100

IRHNB7264SE Datasheet (274.93 KB)