IRLL3303 Datasheet - International Rectifier

IRLL3303 HEXFET Power MOSFET

l l D VDSS = 30V G S RDS(on) = 0.031Ω ID = 4.6A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe.

IRLL3303 Features

* T IF IE R LO G O F L0 14 31 4 TOP B O TT O M 8 www.irf.com IRLL3303 Tape & Reel Information SOT-223 Outline 4 .1 0 (.1 6 1) 3 .9 0 (.1 5 4) 1 .8 5 (.0 7 2 ) 1 .6 5 (.0 6 5 ) 0 .3 5 (.0 1 3 ) 0 .2 5 (.0 1 0 ) TR 2 .0 5 (.0 8 0 ) 1 .9 5 (.0 7 7 ) 7 .5 5 (.2 9 7 ) 7 .4 5 (.2 9 4 ) 7 .6 0 (.2 9

IRLL3303 Datasheet (161.97 KB)