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IRF520VL - Power MOSFET

IRF520VL Description

PD - 94306 HEXFET® Power MOSFET l l l l l l l IRF520VS IRF520VL VDSS = 100V Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Ratin.
D2Pak IRF520VS TO-262 IRF520VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Contin.

IRF520VL Features

* ower MOSFETs www. irf. com 7 IRF520VS/IRF520VL D2Pak Package Outline Dimensions are shown in millimeters (inches) 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00 ) RE F. 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14

IRF520VL Applications

* D RDS(on) = 0.165Ω G S ID = 9.6A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs

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Power MOSFET International Rectifier
International Rectifier IRF520VL-like datasheet

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