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IRF7350PBF Power MOSFET

IRF7350PBF Description

www.DataSheet4U.com PD - 95367 IRF7350PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Availabl.
These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis.

IRF7350PBF Features

* veforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjma

IRF7350PBF Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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