IRF7779L2PBF - Power MOSFET

International Rectifier

IRF7779L2PBF Datasheet Preview — Preview of IRF7779L2PBF PDF

Datasheet Details

Part number	IRF7779L2PBF
Manufacturer	International Rectifier ↗
File Size	280.60 KB
Description	Power MOSFET
Datasheet	IRF7779L2PBF-InternationalRectifier.pdf

IRF7779L2PBF Product details

Description

The IRF7779L2TR/TR1PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile.The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing me

Features

l Gate Charge (nC) Fig 8. Typical Capacitance vs. Drain-to-Source Voltage Fig 9. Typical Total Gate Charge vs Gate-to-Source Voltage 4 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 IRF7779L2PbF ISD, Reverse Drain Current (A) ID , Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 1000 100 TJ = 175°C TJ = 25°C TJ = -40°C 10 1 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 VSD, Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage.

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Published: Oct 16, 2015 |