Datasheet Details
- Part number
- IRF8513PBF
- Manufacturer
- International Rectifier
- File Size
- 375.30 KB
- Datasheet
- IRF8513PBF_InternationalRectifier.pdf
- Description
- Power MOSFET
IRF8513PBF Description
PD - 96196 www.DataSheet4U.com IRF8513PbF HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Gr.
The IRF8513PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package.
IRF8513PBF Features
* Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 11. Maximum Safe Operating Area
Fig 12. Maximum Safe Operating Area
4
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Typical Characteristics Q1 - Control FET
2.0 ID = 8.0A VGS = 10V
RDS(on) , Drain-to-Source On Resistance (Normalized)
IRF8513
IRF8513PBF Applications
* l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards, Game Consoles and Set-Top Box Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% Tested for RG l Lead-Free (Qualified to 260°C Reflow) l
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