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IRF9952 Power MOSFET

IRF9952 Description

PD - 91561B IRF9952 l Generation V Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Very Low Gate Charge and Swi.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF9952 Applications

* Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple device

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Power MOSFET International Rectifier
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