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IRF9952PBF HEXFET Power MOSFET

IRF9952PBF Description

PD - 95135 IRF9952PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Very Low Gate Charge a.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF9952PBF Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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HEXFET Power MOSFET International Rectifier
International Rectifier IRF9952PBF-like datasheet