Datasheet4U Logo Datasheet4U.com

IRFR4104PbF Power MOSFET

IRFR4104PbF Description

PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET® Power MOSFET .
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

IRFR4104PbF Applications

* D-Pak IRFR4104PbF I-Pak IRFU4104PbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM Max. 119

📥 Download Datasheet

Preview of IRFR4104PbF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRFR410 - N-Channel Power MOSFETs (Intersil Corporation)
  • IRFR410B - 500V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFR420 - Power MOSFET (Fairchild Semiconductor)
  • IRFR420A - Power MOSFET (Samsung)
  • IRFR420B - 500V N-Channel MOSFET (Fairchild Semiconductor)
  • IRFR420TR - N-Channel MOSFET (INCHANGE)
  • IRFR430 - Power MOSFET (Fairchild Semiconductor)
  • IRFR430B - 500V N-Channel MOSFET (Fairchild Semiconductor)

📌 All Tags

International Rectifier IRFR4104PbF-like datasheet