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IRG4BC15MDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC15MDPBF Description

PD- 95612 IRG4BC15MDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG4BC15MDPBF Features

* Rugged: 10µsec short circuit capable at VGS = 15V

IRG4BC15MDPBF Applications

* IGBT co-packaged with ultra-soft-recovery anti-parallel diodes C Short Circuit Rated Fast IGBT VCES = 600V Benefits
* Industry standard TO-220AB package
* Lead-Free G E VCE(on) typ. = 1.88V @VGE = 15V, IC = 8.6A
* Best Value for Appliance and Industrial applic

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4BC15MDPBF-like datasheet