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IRG4BC15UDPBF INSULATED GATE BIPOLAR TRANSISTOR

IRG4BC15UDPBF Description

PD - 95613 IRG4BC15UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE .

IRG4BC15UDPBF Features

* • UltraFast: Optimized for high frequencies from10 to 30 kHz in hard switching
* IGBT Co-packaged with ultra-soft-recovery antiparallel diode
* Industry standard TO-220AB package
* Lead-Free C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 2.02V @VGE = 15V, IC = 7.8A

IRG4BC15UDPBF Applications

* High noise immune "Positive Only" gate driveNegative bias gate drive not necessary
* For Low EMI designs- requires little or no snubbing
* Single Package switch for bridge circuit applications
* Compatible with high voltage Gate Driver IC's
* Allows simpler

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INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRG4BC15UDPBF-like datasheet