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IRLZ34NPBF Power MOSFET

IRLZ34NPBF Description

www.DataSheet4U.com PD - 94830 l l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fa.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon.

IRLZ34NPBF Applications

* The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB Absolute Maximum Ratings

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International Rectifier IRLZ34NPBF-like datasheet