Datasheet4U Logo Datasheet4U.com

IRLZ34NS HEXFET Power MOSFET

IRLZ34NS Description

l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperat.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are.

IRLZ34NS Applications

* The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal conn

📥 Download Datasheet

Preview of IRLZ34NS PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRLZ34L - Power MOSFET (Vishay)
  • IRLZ34S - Power MOSFET (Vishay)
  • IRLZ14 - Power MOSFET (Vishay Siliconix)
  • IRLZ14L - Power MOSFET (Vishay Siliconix)
  • IRLZ14S - Power MOSFET (Vishay)
  • IRLZ20 - N-Channel MOSFET (Samsung Electronics)
  • IRLZ24 - N-Channel MOSFET (Samsung Electronics)
  • IRLZ24A - Advanced Power MOSFET (Samsung Electronics)

📌 All Tags

International Rectifier IRLZ34NS-like datasheet