Part number:
HGTP2N120CN
Manufacturer:
Intersil Corporation
File Size:
89.48 KB
Description:
N-channel igbt.
HGTP2N120CN Datasheet (89.48 KB)
Datasheet Details
HGTP2N120CN Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as:
HGTP2N120CN Datasheet (89.48 KB)
Datasheet Details
HGTP2N120CN
Intersil Corporation
89.48 KB
N-channel igbt.
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