HM1-6561B883 Datasheet PDF - Intersil Corporation 256 x 4 CMOS RAM Specs

HM1-6561B883 - 256 x 4 CMOS RAM

Datasheet Summary

Description

The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology.

Synchronous circuit design techniques are employed to achieve high performance and low power operation.

Features

This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.
Low Power Standby.
50µW Max.
Low Power Operation.
. . . 20mW/MHz Max.
Fast Access Time.
. . 200ns Max.
Data Retention.
. . . . at 2.0V Min.
TTL Compatible Input/Output.
High Output Drive - 1 TTL L.

Datasheet Details

Part number	HM1-6561B883
Manufacturer	Intersil Corporation
File Size	143.79 KB
Description	256 x 4 CMOS RAM
Datasheet	HM1-6561B883 Datasheet
Additional preview pages of the HM1-6561B883 datasheet.

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Full PDF Text Transcription

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HM-6561/883 March 1997 256 x 4 CMOS RAM Description The HM-6561/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On-chip latches are provided for address and data outputs allowing efﬁcient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The data inputs and outputs are multiplexed internally for common I/O bus compatibility. The HM-6561/883 is a fully static RAM and may be maintained in any state for an indeﬁnite period of time. Data retention supply voltage and supply current are guaranteed over temperature.

Published: Mar 26, 2005 |