HUF76105DK8 - N-Channel MOSFET
HUF76105DK8 TM Data Sheet June 2000 File Number 4380.6 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET™ process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was
HUF76105DK8 Features
* Logic Level Gate Drive
* 5A, 30V
* Ultra Low On-Resistance, rDS(ON) = 0.050Ω
* Temperature Compensating PSPICE® Model
* Temperature Compensating SABER© Model
* Thermal Impedance SPICE Model
* Thermal Impedance SABER Model
* Peak Curre
