IRF240 Datasheet - Intersil Corporation

IRF240 N-Channel Power MOSFET

IRF240 Data Sheet March 1999 File Number 1584.3 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching .

IRF240 Features

* 18A, 200V

* rDS(ON) = 0.180Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334, “Guidelines for

IRF240 Datasheet (59.29 KB)

IRF240 Datasheet Preview — Preview of IRF240 PDF

Datasheet Details

Part number:

IRF240

Manufacturer:

Intersil Corporation

File Size:

59.29 KB

Description:

N-channel power mosfet.

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IRF240 N-Channel Power MOSFET Intersil Corporation

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