IRF840 Datasheet - Intersil Corporation

IRF840 8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET

IRF840 Data Sheet July 1999 File Number 2312.3 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching tra.

IRF840 Features

* 8A, 500V

* rDS(ON) = 0.850Ω

* Single Pulse Avalanche Energy Rated

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Related Literature - TB334 “Guidelines for S

IRF840_IntersilCorporation.pdf

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Datasheet Details

Part number:

IRF840

Manufacturer:

Intersil Corporation

File Size:

56.91 KB

Description:

8a/ 500v/ 0.850 ohm/ n-channel power mosfet.

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TAGS

IRF840 IRF840 500V 0.850 Ohm N-Channel Power MOSFET Intersil Corporation

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