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IRFBC40 Datasheet - Intersil Corporation

IRFBC40 N-Channel Power MOSFET

IRFBC40 Data Sheet July 1999 File Number 2157.3 6.2A, 600V, 1.200 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching .

IRFBC40 Features

* 6.2A, 600V

* rDS(ON) = 1.200Ω

* Single Pulse Avalanche Energy Rated

* Simple Drive Requirements

* Ease of Paralleling

* Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART

IRFBC40 Datasheet (55.08 KB)

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Datasheet Details

Part number:

IRFBC40

Manufacturer:

Intersil Corporation

File Size:

55.08 KB

Description:

N-channel power mosfet.

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TAGS

IRFBC40 N-Channel Power MOSFET Intersil Corporation

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