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RFL4N12

N-Channel Power MOSFET

RFL4N12 Features

* 4A, 120V and 150V

* rDS(ON) = 0.400Ω

* SOA is Power Dissipation Limited

* Nanosecond Switching Speeds

* Linear Transfer Characteristics

* High Input Impedance

* Majority Carrier Device [ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150

RFL4N12 General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These typ.

RFL4N12 Datasheet (31.83 KB)

Preview of RFL4N12 PDF

Datasheet Details

Part number:

RFL4N12

Manufacturer:

Intersil Corporation

File Size:

31.83 KB

Description:

N-channel power mosfet.

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RFL4N12 N-Channel Power MOSFET Intersil Corporation

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