RFL4N12 - N-Channel Power MOSFET

Intersil Corporation

RFL4N12 Datasheet Preview — Preview of RFL4N12 PDF

Datasheet Details

Part number	RFL4N12
Manufacturer	Intersil Corporation
File Size	31.83 KB
Description	N-Channel Power MOSFET
Datasheet	RFL4N12_IntersilCorporation.pdf

RFL4N12 Product details

Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

4A, 120V and 150V.
rDS(ON) = 0.400Ω.
SOA is Power Dissipation Limited.
Nanosecond Switching Speeds.
Linear Transfer Characteristics.
High Input Impedance.
Majority Carrier Device [ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150V, 0.400 Ohm, NChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel Power MOSFETs, TO205AF) /Creator () /DOCIN FO pdfmark Ordering Information PART NUMBER RFL4N12 RFL4N15 PACKA.

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Published: Apr 16, 2005 |