RFL4N15 N-Channel Power MOSFET

Intersil Corporation

Description

Semiconductor RFL4N12, RFL4N15 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs .
These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching conv.

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Datasheet Specifications

Part number: RFL4N15
Manufacturer: Intersil Corporation
File Size: 31.83 KB
Datasheet: RFL4N15_IntersilCorporation.pdf
Description: N-Channel Power MOSFET

Features

* 4A, 120V and 150V
* rDS(ON) = 0.400Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Majority Carrier Device [ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150

Applications

* such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9192. September 1998

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RFL4N15 N-Channel Power MOSFET Intersil Corporation

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