KF3N60D - N-CHANNEL MOS FIELD EFFECT TRANSISTOR
KF3N60D Features
* VDSS= 600V, ID= 2.3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT KF3N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10 G 0
