KF3N60I N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA KF3N60D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche charact.

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Datasheet Specifications

Part number: KF3N60I
Manufacturer: KEC
File Size: 82.51 KB
Datasheet: KF3N60I-KEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS= 600V, ID= 2.3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT KF3N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10 G 0

KF3N60I Distributors

📁 Related Datasheet

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KF3N60I N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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