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KF3N60P, KF3N60F Datasheet - KEC

KF3N60P - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KF3N60P Features

* VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF3N60P KF3N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche

KF3N60F-KEC.pdf

This datasheet PDF includes multiple part numbers: KF3N60P, KF3N60F. Please refer to the document for exact specifications by model.
KF3N60P Datasheet Preview Page 2 KF3N60P Datasheet Preview Page 3

Datasheet Details

Part number:

KF3N60P, KF3N60F

Manufacturer:

KEC

File Size:

92.48 KB

Description:

N-channel mos field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: KF3N60P, KF3N60F.
Please refer to the document for exact specifications by model.

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📌 All Tags

KF3N60F N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC