KF3N60F N-CHANNEL MOS FIELD EFFECT TRANSISTOR

KEC

Description

SEMICONDUCTOR TECHNICAL DATA KF3N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR General .
KF3N60P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanch.

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Datasheet Specifications

Part number: KF3N60F
Manufacturer: KEC
File Size: 92.48 KB
Datasheet: KF3N60F-KEC.pdf
Description: N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Features

* VDSS= 600V, ID= 3A Drain-Source ON Resistance : RDS(ON)=3.3 Qg(typ) = 8.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC RATING SYMBOL KF3N60P KF3N60F UNIT Drain-Source Voltage VDSS 600 Gate-Source Voltage VGSS 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche

KF3N60F Distributors

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KF3N60F N-CHANNEL MOS FIELD EFFECT TRANSISTOR KEC

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