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KMA3D0N20SA - N-Channel MOSFET

KMA3D0N20SA Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KMA3D0N20SA Features

* hVDSS=20V, ID=3A hDrain to Source on-state Resistance RDS(ON)=55mʃ(Max. ) @ VGS=4.5V RDS(ON)=110mʃ(Max. ) @ VGS=2.5V hSuper Hige Dense Cell Design KMA3D0N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 2 3 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.

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Datasheet Details

Part number
KMA3D0N20SA
Manufacturer
KEC
File Size
755.05 KB
Datasheet
KMA3D0N20SA_KEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET KEC
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