Datasheet4U Logo Datasheet4U.com

KMA3D6N20SA - N-Channel MOSFET

KMA3D6N20SA Description

SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

KMA3D6N20SA Features

* VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max. ) @ VGS=4.5V RDS(ON)=65m (Max. ) @ VGS=2.5V Super Hige Dense Cell Design KMA3D6N20SA N-Ch Trench MOSFET E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.

📥 Download Datasheet

Preview of KMA3D6N20SA PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
KMA3D6N20SA
Manufacturer
KEC
File Size
697.35 KB
Datasheet
KMA3D6N20SA-KEC.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • KMA310 - Programmable angle sensor (NXP)
  • KMA310A - Programmable angle sensor (NXP)
  • KMA320 - Dual channel programmable angle sensor (NXP)
  • KMA320A - Dual channel programmable angle sensor (NXP)
  • KMA010-xxx - Board to Board Interconnecttions (Advanced Interconnections)
  • KMA1117 - 1A Low Dropout Positive Adjustable (Guangdong Kexin Industrial)
  • KMA199 - Programmable angle sensor (NXP)
  • KMA199E - Programmable angle sensor (NXP Semiconductors)

📌 All Tags

N-Channel MOSFET KEC
KEC KMA3D6N20SA-like datasheet

KMA3D6N20SA Stock/Price