Datasheet Details
- Part number
- KMA3D6N20SA
- Manufacturer
- KEC
- File Size
- 697.35 KB
- Datasheet
- KMA3D6N20SA-KEC.pdf
- Description
- N-Channel MOSFET
KMA3D6N20SA Description
SEMICONDUCTOR TECHNICAL DATA General .
This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
KMA3D6N20SA Features
* VDSS=20V, ID=3.6A Drain-Source ON Resistance RDS(ON)=45m (Max. ) @ VGS=4.5V RDS(ON)=65m (Max. ) @ VGS=2.5V Super Hige Dense Cell Design
KMA3D6N20SA
N-Ch Trench MOSFET
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.
📁 Related Datasheet
📌 All Tags
KMA3D6N20SA Stock/Price