KMB075N75P Datasheet - KEC

KMB075N75P N-Channel Trench MOSFET

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction , electronic lamp ballasts based on half bridge topology and switching mode power su.

KMB075N75P Features

* VDSS= 75V, ID= 75A Drain-Source ON Resistance : RDS(ON)=0.017 @VGS = 10V Qg(typ.) = 85nC Improved dv/dt capacity, high Ruggedness Maximum Junction Temperature Range (175 ) KMB075N75P N CHANNEL MOS FIELD EFFECT TRANSISTOR A E I K M D NN F G B Q L J O C P H 123 1. GATE 2. DRAIN 3. SOURCE DIM

KMB075N75P-KEC.pdf