KIA65N06 Datasheet (KIA) - 60V N-CHANNEL MOSFET

KIA65N06, 60V N-CHANNEL MOSFET

These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the

KIA65N06 Features

* 65A, 60V, RDS(on)= 0.016Ω @VGS= 10 V Low gate charge ( typical 48nC) Low Crss ( typical 32.5pF) Fast switching 100% avalanche tested Improved dv/dt capability 175º maximum junction temperature rating www.DataSheet.net/ 3. Pin con