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2SD1006 - NPN Silicon Epitaxial Transistor

2SD1006 Description

SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Transistors .

2SD1006 Features

* High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse)
* Collector l power dissipation Junction temperature Storage temperature
* . PW 10ms,duty

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Datasheet Details

Part number
2SD1006
Manufacturer
Kexin
File Size
69.10 KB
Datasheet
2SD1006_Kexin.pdf
Description
NPN Silicon Epitaxial Transistor

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