2SD1033
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Silicon npn transistor.
📁 Related Datasheet
2SD103 - Silicon NPN Power Transistors
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V(Min) ·High Power Dissipation-
: PC= 25W(M.
2SD1030 - Silicon NPN Transistor
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Transistor
2SD1030
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
2.8 –0.3
+0.2
s Features
q q q q q
0.65±0.15
+0.25.
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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2SD1032 - Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
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2SD1032A - Si NPN Transistor
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SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER)
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isc Silicon NPN Power Transistor
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2SD1037 - SILICON POWER TRANSISTOR
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..
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