Part number:
2SD1760
Manufacturer:
Kexin
File Size:
1.05 MB
Description:
Npn transistors.
* Low VCE (sat)
* Complementary to 2SB1184 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 + 0.151 .5 0 -0.15 0.80+0.1 -0.1 0.127 m ax + 0.155 .5 5 -0.15 3.80 Unit: mm +2.65 0.25 -0.1 +0.50 0.15 -0.15 +1.50 0.28 -0.1 + 0.29 .7 0 -0.2
* Absolute Maximum Rati
2SD1760
Kexin
1.05 MB
Npn transistors.
📁 Related Datasheet
2SD1760 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1760
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= 0.5V(Typ)@ IC= 2A ·Comple.
2SD1760 - Power Transistor
(GME)
Power Transistor
FEATURES
Low VCE(sat). VCE(sat)=0.5V(Typ.) (IC/IB=2A/0.2A)
Complements the 2SB1184.
APPLICATIONS
Epitaxial planar type. NPN s.
2SD1760 - Power Transistor
(Rohm)
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB12.
2SD1760 - NPN Epitaxial Planar Silicon Transistor
(SeCoS)
Elektronische Bauelemente
2SD1760
3A , 60V NPN Epitaxial Planar Silicon Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-.
2SD1761 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1761
..
DESCRIPTION ·With TO-220Fa package ·Low co.
2SD1761 - Silicon NPN Power Transistors
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Wide Area of Safe Operation ·Complement to .
2SD1762 - Power Transistor
(Rohm)
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864 / 2SD1762
FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complem.
2SD1762 - Power Transistor
(GME)
Power Transistor(50V,3A )
FEATURES
Low VCE(sat) VCE(sat)=0.5V(Typ)（IC/IB=2A/0.2A）
Complements the 2SB1185.
Pb
Lead-free
Production specification.
